QM3018M6 MOSFET Transistor

The QM3018M6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3018M6 transistor as follows.

QM3018M6 Transistor Specification

Transistor Code		QM3018M6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PRPAK5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.003Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		725pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		56nC

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