QM3018D MOSFET Transistor

The QM3018D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3018D transistor as follows.

QM3018D Transistor Specification

Transistor Code		QM3018D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	155A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.003Ohm
Power Dissipation (Maximum)	PD	89.3W
Drain-Source Capacitance		725pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6.3nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		56.9nC

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