QM3016P MOSFET Transistor

The QM3016P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3016P transistor as follows.

QM3016P Transistor Specification

Transistor Code		QM3016P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	86.8W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		49nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		31.6nC

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