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QM3016M6 MOSFET Transistor

The QM3016M6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3016M6 transistor as follows.

Circuit diagram symbol of the QM3016M6 transistor

QM3016M6 Transistor Specification

Transistor Code QM3016M6
Transistor Type MOSFET
Control Channel Type N-Channel
Package PRPAK5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 108A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.004Ohm
Power Dissipation (Maximum) PD 69W
Drain-Source Capacitance 400pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 49nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 31.6nC

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