QM3016AM6 MOSFET Transistor

The QM3016AM6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3016AM6 transistor as follows.

QM3016AM6 Transistor Specification

Transistor Code		QM3016AM6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PRPAK5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	108A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	69.4W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.6nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		23.4nC

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