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QM3014D MOSFET Transistor

The QM3014D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3014D transistor as follows.

Circuit diagram symbol of the QM3014D transistor

QM3014D Transistor Specification

Transistor Code QM3014D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 43A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 37.5W
Drain-Source Capacitance 131pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 9.8nC

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