QM3010U MOSFET Transistor

The QM3010U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3010U transistor as follows.

QM3010U Transistor Specification

Transistor Code		QM3010U
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	15.6W
Drain-Source Capacitance		38pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		2.75nC

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