QM3010S MOSFET Transistor

The QM3010S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3010S transistor as follows.

QM3010S Transistor Specification

Transistor Code		QM3010S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		38pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19.2nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		2.72nC

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