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QM3007S MOSFET Transistor

The QM3007S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3007S transistor as follows.

Circuit diagram symbol of the QM3007S transistor

QM3007S Transistor Specification

Transistor Code QM3007S
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-89
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.062Ohm
Power Dissipation (Maximum) PD 2.08W
Drain-Source Capacitance 82pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11.4nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 5.22nC

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