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QM3006U1 MOSFET Transistor

The QM3006U1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3006U1 transistor as follows.

Circuit diagram symbol of the QM3006U1 transistor

QM3006U1 Transistor Specification

Transistor Code QM3006U1
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251S
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0055Ohm
Power Dissipation (Maximum) PD 53W
Drain-Source Capacitance 267pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 20nC

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