QM3003M3 MOSFET Transistor

The QM3003M3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3003M3 transistor as follows.

QM3003M3 Transistor Specification

Transistor Code		QM3003M3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PRPAK3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	1.67W
Drain-Source Capacitance		194pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.2nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		12.5nC

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