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QM3003J MOSFET Transistor

The QM3003J is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3003J transistor as follows.

Circuit diagram symbol of the QM3003J transistor

QM3003J Transistor Specification

Transistor Code QM3003J
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-89
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.032Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 194pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14.8nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 12.6nC

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