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QM3002M3 MOSFET Transistor

The QM3002M3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3002M3 transistor as follows.

Circuit diagram symbol of the QM3002M3 transistor

QM3002M3 Transistor Specification

Transistor Code QM3002M3
Transistor Type MOSFET
Control Channel Type N-Channel
Package PRPAK3X3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 1.67W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.6nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 6.2nC

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