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QM3001G MOSFET Transistor

The QM3001G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3001G transistor as follows.

Circuit diagram symbol of the QM3001G transistor

QM3001G Transistor Specification

Transistor Code QM3001G
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-223
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.052Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8.4nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 6.4nC

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