QM2606C1 MOSFET Transistor

The QM2606C1 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2606C1 transistor as follows.

QM2606C1 Transistor Specification

Transistor Code		QM2606C1
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOT-363
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1.52A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	0.33W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26.6nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		3.64nC

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