QM2604V MOSFET Transistor

The QM2604V is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2604V transistor as follows.

QM2604V Transistor Specification

Transistor Code		QM2604V
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		44pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		4.7nC

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