QM2517C1 MOSFET Transistor

The QM2517C1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2517C1 transistor as follows.

QM2517C1 Transistor Specification

Transistor Code		QM2517C1
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-363
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	0.33W
Drain-Source Capacitance		33pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		2.9nC

UXPython is not the creator or an official representative of the QM2517C1 MOSFET transistor. You can download the official QM2517C1 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

SQ1539EH MOSFET Transistor SI1470DH MOSFET Transistor AFP1913 MOSFET Transistor SI1402DH MOSFET Transistor SI1553CDL MOSFET Transistor PJ4N3KDW MOSFET Transistor MIC94052YC6TR MOSFET Transistor STP6308 MOSFET Transistor SI1563DH MOSFET Transistor NVJD4401N MOSFET Transistor SQ1912EEH MOSFET Transistor SI1433DH MOSFET Transistor SQ1563AEH MOSFET Transistor SI1428EDH MOSFET Transistor SI1972DH MOSFET Transistor AFN7002DS MOSFET Transistor NVTJD4001N MOSFET Transistor PJT7600 MOSFET Transistor SQ1431EH MOSFET Transistor SI1406DH MOSFET Transistor