QM2507W MOSFET Transistor

The QM2507W is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2507W transistor as follows.

QM2507W Transistor Specification

Transistor Code		QM2507W
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		82pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32.2nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		10.1nC

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