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QM2502M9 MOSFET Transistor

The QM2502M9 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2502M9 transistor as follows.

Circuit diagram symbol of the QM2502M9 transistor

QM2502M9 Transistor Specification

Transistor Code QM2502M9
Transistor Type MOSFET
Control Channel Type N-Channel
Package PRPAK2X5
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0185Ohm
Power Dissipation (Maximum) PD 3.57W
Drain-Source Capacitance 86pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 64nS
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 11.4nC

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