QM2416Y1 MOSFET Transistor

The QM2416Y1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2416Y1 transistor as follows.

QM2416Y1 Transistor Specification

Transistor Code		QM2416Y1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-323
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	0.33W
Drain-Source Capacitance		41pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		29.6nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		6.4nC

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