QM2415SN8 MOSFET Transistor

The QM2415SN8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2415SN8 transistor as follows.

QM2415SN8 Transistor Specification

Transistor Code		QM2415SN8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X2
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		48pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25.6nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		5.6nC

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