QM2411SN8 MOSFET Transistor

The QM2411SN8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2411SN8 transistor as follows.

QM2411SN8 Transistor Specification

Transistor Code		QM2411SN8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X2
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		82pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32.2nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		10.1nC

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