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QM2411G MOSFET Transistor

The QM2411G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2411G transistor as follows.

Circuit diagram symbol of the QM2411G transistor

QM2411G Transistor Specification

Transistor Code QM2411G
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-223
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 82pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32.2nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 10.1nC

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