QM2410G MOSFET Transistor

The QM2410G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2410G transistor as follows.

QM2410G Transistor Specification

Transistor Code		QM2410G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.037Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		8.5nC

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