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QM2409J MOSFET Transistor

The QM2409J is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2409J transistor as follows.

Circuit diagram symbol of the QM2409J transistor

QM2409J Transistor Specification

Transistor Code QM2409J
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-89
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.075Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 90.8pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9.6nS
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 9.7nC

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