QM2409J MOSFET Transistor

The QM2409J is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2409J transistor as follows.

QM2409J Transistor Specification

Transistor Code		QM2409J
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-89
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		90.8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.6nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		9.7nC

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