QM2401G MOSFET Transistor

The QM2401G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2401G transistor as follows.

QM2401G Transistor Specification

Transistor Code		QM2401G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		114pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		47.4nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		10nC

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