QM2401D MOSFET Transistor

The QM2401D is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2401D transistor as follows.

QM2401D Transistor Specification

Transistor Code		QM2401D
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	18.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		114pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.8nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		11.1nC

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