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QM09N65P MOSFET Transistor

The QM09N65P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM09N65P transistor as follows.

Circuit diagram symbol of the QM09N65P transistor

QM09N65P Transistor Specification

Transistor Code QM09N65P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 156W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19.4nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 33nC

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