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QM09N50F MOSFET Transistor

The QM09N50F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM09N50F transistor as follows.

Circuit diagram symbol of the QM09N50F transistor

QM09N50F Transistor Specification

Transistor Code QM09N50F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.75Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 112pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19.2nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 34nC

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