QM06N65F MOSFET Transistor

The QM06N65F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM06N65F transistor as follows.

QM06N65F Transistor Specification

Transistor Code		QM06N65F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		76pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19.2nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		27.5nC

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