QM04N65B MOSFET Transistor

The QM04N65B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM04N65B transistor as follows.

QM04N65B Transistor Specification

Transistor Code		QM04N65B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.6Ohm
Power Dissipation (Maximum)	PD	112W
Drain-Source Capacitance		56pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18.8nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		18nC

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