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QM04N60F MOSFET Transistor

The QM04N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM04N60F transistor as follows.

Circuit diagram symbol of the QM04N60F transistor

QM04N60F Transistor Specification

Transistor Code QM04N60F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 41.6W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20.4nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 18.7nC

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