QM01N65U MOSFET Transistor

The QM01N65U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM01N65U transistor as follows.

QM01N65U Transistor Specification

Transistor Code		QM01N65U
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	41.6W
Drain-Source Capacitance		17.8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18.4nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		6.03nC

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