QM01N65L MOSFET Transistor

The QM01N65L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM01N65L transistor as follows.

QM01N65L Transistor Specification

Transistor Code		QM01N65L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	0.89W
Drain-Source Capacitance		17.8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18.4nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		6.03nC

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