QM0008D MOSFET Transistor

The QM0008D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM0008D transistor as follows.

QM0008D Transistor Specification

Transistor Code		QM0008D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.31Ohm
Power Dissipation (Maximum)	PD	20.8W
Drain-Source Capacitance		29pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		9.6nC

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