QM0007G MOSFET Transistor

The QM0007G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM0007G transistor as follows.

QM0007G Transistor Specification

Transistor Code		QM0007G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		29pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18.4nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		9.3nC

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