QH8MA3 MOSFET Transistor

The QH8MA3 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QH8MA3 transistor as follows.

QH8MA3 Transistor Specification

Transistor Code		QH8MA3
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSMT8
Transistor SMD Code		MA3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		7.2nC

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