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QH8KA2 MOSFET Transistor

The QH8KA2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QH8KA2 transistor as follows.

Circuit diagram symbol of the QH8KA2 transistor

QH8KA2 Transistor Specification

Transistor Code QH8KA2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSMT8
Transistor SMD Code KA2
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.035Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 62pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 8.4nC

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