QH8KA1 MOSFET Transistor

The QH8KA1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QH8KA1 transistor as follows.

QH8KA1 Transistor Specification

Transistor Code		QH8KA1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT8
Transistor SMD Code		KA1
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.073Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.5nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		3nC

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