PZP103BYB MOSFET Transistor

The PZP103BYB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PZP103BYB transistor as follows.

PZP103BYB Transistor Specification

Transistor Code		PZP103BYB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT523
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		9pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS

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