PZP003BYB MOSFET Transistor

The PZP003BYB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PZP003BYB transistor as follows.

PZP003BYB Transistor Specification

Transistor Code		PZP003BYB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT523
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	13Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		11pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS

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