PV650BA MOSFET Transistor

The PV650BA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PV650BA transistor as follows.

PV650BA Transistor Specification

Transistor Code		PV650BA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		305pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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