PV600BA MOSFET Transistor

The PV600BA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PV600BA transistor as follows.

PV600BA Transistor Specification

Transistor Code		PV600BA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0108Ohm
Power Dissipation (Maximum)	PD	1.95W
Drain-Source Capacitance		108pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		41nS
Gate-Threshold Voltage (Maximum)		2.5V

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