PV510BA MOSFET Transistor

The PV510BA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PV510BA transistor as follows.

PV510BA Transistor Specification

Transistor Code		PV510BA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS

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