PV501BA MOSFET Transistor

The PV501BA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PV501BA transistor as follows.

PV501BA Transistor Specification

Transistor Code		PV501BA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	1.8W
Drain-Source Capacitance		426pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS

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