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PSMN6R0-25YLB MOSFET Transistor

The PSMN6R0-25YLB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN6R0-25YLB transistor as follows.

Circuit diagram symbol of the PSMN6R0-25YLB transistor

PSMN6R0-25YLB Transistor Specification

Transistor Code PSMN6R0-25YLB
Transistor Type MOSFET
Control Channel Type N-Channel
Package LFPAK
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 73A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0061Ohm
Power Dissipation (Maximum) PD 58W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 1.95V
Total Gate Charge 19.3nC

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