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PSMN4R0-30YLD MOSFET Transistor

The PSMN4R0-30YLD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN4R0-30YLD transistor as follows.

Circuit diagram symbol of the PSMN4R0-30YLD transistor

PSMN4R0-30YLD Transistor Specification

Transistor Code PSMN4R0-30YLD
Transistor Type MOSFET
Control Channel Type N-Channel
Package LFPAK56
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 95A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.004Ohm
Power Dissipation (Maximum) PD 64W
Drain-Source Capacitance 812pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 21.2nS
Gate-Threshold Voltage (Maximum) 2.2V
Total Gate Charge 19.4nC

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