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PSMN1R6-30PL MOSFET Transistor

The PSMN1R6-30PL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN1R6-30PL transistor as follows.

Circuit diagram symbol of the PSMN1R6-30PL transistor

PSMN1R6-30PL Transistor Specification

Transistor Code PSMN1R6-30PL
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0017Ohm
Power Dissipation (Maximum) PD 306W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 2.15V
Total Gate Charge 212nC

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