PSMN102-200Y MOSFET Transistor

The PSMN102-200Y is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN102-200Y transistor as follows.

PSMN102-200Y Transistor Specification

Transistor Code		PSMN102-200Y
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.102Ohm
Power Dissipation (Maximum)	PD	113W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		30.7nC

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