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PSMN102-200Y MOSFET Transistor

The PSMN102-200Y is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN102-200Y transistor as follows.

Circuit diagram symbol of the PSMN102-200Y transistor

PSMN102-200Y Transistor Specification

Transistor Code PSMN102-200Y
Transistor Type MOSFET
Control Channel Type N-Channel
Package LFPAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 21.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.102Ohm
Power Dissipation (Maximum) PD 113W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 30.7nC

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