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PSMN017-80BS MOSFET Transistor

The PSMN017-80BS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN017-80BS transistor as follows.

Circuit diagram symbol of the PSMN017-80BS transistor

PSMN017-80BS Transistor Specification

Transistor Code PSMN017-80BS
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.017Ohm
Power Dissipation (Maximum) PD 103W
Drain-Source Capacitance 154pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 22nC

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